[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability
Xiao Zhang,, Jing Li,, Grubbs, Melody, Deal, Michael, Magyari-Kope, Blanka, Clemens, Bruce M., Nishi, YoshioYear:
2009
Language:
english
DOI:
10.1109/iedm.2009.5424420
File:
PDF, 356 KB
english, 2009