[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - High characteristics temperature of strain-compensated 1.3 μm InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy

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