${\rm SiN}_{x}$ /InAlN/AlN/GaN MIS-HEMTs With 10.8 ${\rm...

IEEE Electron Device Letters 2014 / 5 Vol. 35; Iss. 5

${\rm SiN}_{x}$ /InAlN/AlN/GaN MIS-HEMTs With 10.8 ${\rm THz}\cdot{\rm V}$ Johnson Figure of Merit

Downey, Brian P., Meyer, David J., Katzer, D. Scott, Roussos, Jason A., Ming Pan,, Xiang Gao,
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2014.2313023
Date:
May, 2014
File:
PDF, 650 KB
english, 2014
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