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[IEEE 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC) - Kyoto, Japan (2010.09.26-2010.09.30)] 22nd IEEE International Semiconductor Laser Conference - Development of AlGaN-based deep-UV LEDs using high-quality AlN on sapphire
Hirayama, Hideki, Tsukada, Yusuke, Akiba, Masahiro, Kamata, NorihikoYear:
2010
Language:
english
DOI:
10.1109/islc.2010.5642733
File:
PDF, 604 KB
english, 2010