Improvement of Data Retention During Long-Term Use by...

IEEE Electron Device Letters 2013 / 06 Vol. 34; Iss. 6

Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in ${\rm TaO}_{x}$ Bipolar-ReRAM

Ninomiya, Takeki, Muraoka, Shunsaku, Wei, Zhiqiang, Yasuhara, Ryutaro, Katayama, Koji, Takagi, Takeshi
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2258653
Date:
June, 2013
File:
PDF, 501 KB
english, 2013
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