![](/img/cover-not-exists.png)
[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Accurate Large-Signal Modeling of AlGaN-GaN HEMT Including Trapping and Self-Heating Induced Dispersion
Jarndal, A., Bunz, B., Kompa, G.Year:
2006
Language:
english
DOI:
10.1109/ispsd.2006.1666080
File:
PDF, 3.39 MB
english, 2006