[IEEE 2006 IEEE International Symposium on Power...

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[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Accurate Large-Signal Modeling of AlGaN-GaN HEMT Including Trapping and Self-Heating Induced Dispersion

Jarndal, A., Bunz, B., Kompa, G.
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Year:
2006
Language:
english
DOI:
10.1109/ispsd.2006.1666080
File:
PDF, 3.39 MB
english, 2006
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