1.3 μm InAs/GaAs quantum dot lasers on Si substrates by...

Journal of Applied Physics 2012 Vol. 112; Iss. 3

1.3 μm InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding

Tatsumi, Tomohiko, Tanabe, Katsuaki, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko
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Volume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4742198
File:
PDF, 1.63 MB
english, 2012
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