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[IEEE 2010 IEEE International Integrated Reliability Workshop (IIRW) - S. Lake Tahoe, CA, USA (2010.10.17-2010.10.21)] 2010 IEEE International Integrated Reliability Workshop Final Report - MOS transistor characteristics and its dependence of plasma charging degradation on the test structure layout for a 0.13µm CMOS technology
Martin, Andreas, Vollertsen, Rolf-Peter, Reisinger, HansYear:
2010
Language:
english
DOI:
10.1109/iirw.2010.5706488
File:
PDF, 420 KB
english, 2010