Effect of Ga/Si interdiffusion on optical and transport...

Physical Review B 1998 / 7 Vol. 58; Iss. 3

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy

Calleja, E., Sánchez-García, M. A., Basak, D., Sánchez, F. J., Calle, F., Youinou, P., Muñoz, E., Serrano, J. J., Blanco, J. M., Villar, C., Laine, T., Oila, J., Saarinen, K., Hautojärvi, P., Molloy,
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Volume:
58
Language:
english
Journal:
Physical Review B
DOI:
10.1103/physrevb.58.1550
Date:
July, 1998
File:
PDF, 204 KB
english, 1998
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