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[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Interface Barrier Abruptness and Work Function requirements for scaling Schottky Source-Drain MOS Transistors
Agrawal, Naveen, Chen, Jingde, Hui, Zhao, Yeo, Yee-chia, Lee, Sungjoo, H. Chan, Daniel, Li, Ming-fu, Samudra, GaneshYear:
2006
Language:
english
DOI:
10.1109/sispad.2006.282857
File:
PDF, 3.74 MB
english, 2006