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[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Extreme High-Performance n- and p-MOSFETs Boosted by Dual-Metal/High-k Gate Damascene Process using Top-Cut Dual Stress Liners on (100) Substrates
Mayuzumi, S., Wang, J., Yamakawa, S., Tateshita, Y., Hirano, T., Nakata, M., Yamaguchi, S., Yamamoto, Y., Miyanami, Y., Oshiyama, I., Tanaka, K., Tai, K., Ogawa, K., Kugimiya, K., Nagahama, Y., HagimoYear:
2007
Language:
english
DOI:
10.1109/iedm.2007.4418926
File:
PDF, 1.93 MB
english, 2007