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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Physical model of BTI, TDDB and SILC in W02-based high-k gate dielectrics
Torii, K., Shiraishi, K., Miyazaki, S., Yamabe, K., Bocro, M., Chikyow, T., Yamada, K., Kitajima, H., Arikado, T.Year:
2004
Language:
english
DOI:
10.1109/iedm.2004.1419085
File:
PDF, 260 KB
english, 2004