[IEEE Proceedings of 1995 IEEE International Reliability Physics Symposium - Las Vegas, NV (1995.04.4-1995.04.6)] 33rd IEEE International Reliability Physics Symposium - Reduced poly-Si TFT threshold voltage instability by high-temperature hydrogenation of a-Si-like spin centers
Kamigaki, Y., Hashimoto, T., Aoki, M., Yokogawa, K., Moniwa, M., Iijima, S., Minami, M., Ishida, H., Okuhira, H., Aoki, S., Yamanaka, T.Year:
1995
Language:
english
DOI:
10.1109/relphy.1995.513646
File:
PDF, 535 KB
english, 1995