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Radiation Induced Charge Trapping in Ultrathin ${\rm HfO}_{2}$-Based MOSFETs
Dixit, Sriram K., Zhou, Xing J., Schrimpf, Ronald D., Fleetwood, Daniel M., Pantelides, Sokrates T., Choi, Rino, Bersuker, Gennadi, Feldman, Leonard C.Volume:
54
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2007.911423
Date:
December, 2007
File:
PDF, 284 KB
english, 2007