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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Ultra low power SiGe:C HBT for 0.18 μm RF-BiCMOS
Xu, M.W., Decoutere, S., Sibaja-Hernandez, A., Van Wichelen, K., Witters, L., Loo, R., Kunnen, E., Knorr, C., Sadovnikov, A., Bulucea, C.Year:
2003
Language:
english
DOI:
10.1109/iedm.2003.1269181
File:
PDF, 253 KB
english, 2003