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Ab initio investigation of the dislocation structure and activation energy for dislocation motion in silicon carbide
Sitch, P. K., Jones, R., Öberg, S., Heggie, M. I.Volume:
52
Language:
english
Journal:
Physical Review B
DOI:
10.1103/physrevb.52.4951
Date:
August, 1995
File:
PDF, 496 KB
english, 1995