[IEEE 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Sinaia, Romania (9-12 Oct. 1996)] 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Development of the amorphous, high resistivity Ge:(O,N) films for radiation-hardened MIS device applications
Jishiashvili, D., Shiolashvili, Z., Janelidze, R., Gobronidze, V., Kutelia, E., Mosidze, L., Nakhutsrishvili, I., Katsiashvili, M.Volume:
2
Year:
1996
Language:
english
DOI:
10.1109/smicnd.1996.557417
File:
PDF, 468 KB
english, 1996