[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - How to Achieve High Mobility Thin Film Transistors by Direct Deposition of Silicon Using 13.56 MHz RF PECVD?
Lee, C.-H., Sazonov, A., Robertson, J., Nathan, A., Esmaeili-Rad, M.R., Servati, P., Milne, W.I.Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.346766
File:
PDF, 231 KB
english, 2006