[IEEE 56th Annual Device Research Conference Digest - Charlottesville, VA, USA (22-24 June 1998)] 56th Annual Device Research Conference Digest (Cat. No.98TH8373) - Characterization of hole transport phenomena in AlGaAs-InGaAs HEMT's biased in impact-ionization regime
Meneghesso, G., Di Carlo, A., Manfredi, M., Pavesi, M., Canali, C., Zanoni, E.Year:
1998
DOI:
10.1109/drc.1998.731111
File:
PDF, 407 KB
1998