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[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - The Effect of Rapid Thermal Annealing on Oxygen Precipitation in Nitrogen Doped Silicon Substrate
Stuchlikova, L'., Harmatha, L., Tapajna, M., Ballo, P., Pisecny, P., Benkovic, M., Jakabovic, J.Year:
2006
Language:
english
DOI:
10.1109/asdam.2006.331149
File:
PDF, 3.60 MB
english, 2006