[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Modulation of drain current by redox-active molecules incorporated in Si MOSFETs
Gowda, S., Mathur, G., Qiliang Li,, Surthi, S., Qian Zhao,, Lindsey, J.S., Bocian, D.F., Misra, V.Year:
2004
Language:
english
DOI:
10.1109/iedm.2004.1419267
File:
PDF, 320 KB
english, 2004