Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2011 Vol. 29; Iss. 3
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Cl[sub 2]/BCl[sub 3]/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors
Kim, Hyeongnam, Schuette, Michael L., Lu, WuVolume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3581090
File:
PDF, 597 KB
english, 2011