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[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - 3D simulation of electrical characteristic fluctuation induced by interface traps at Si/high-к oxide interface and random dopants in 16-nm-Gate CMOS devices
Cheng, Hui-Wen, Chiu, Yung-Yueh, Li, YimingYear:
2011
Language:
english
DOI:
10.1109/drc.2011.5994435
File:
PDF, 1.81 MB
english, 2011