Effect of p-doped overlayer thickness on RF-dispersion in...

IEEE Electron Device Letters 2002 / 06 Vol. 23; Iss. 6

Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

Jimnez, A., Buttari, D., Jena, D., Coffie, R., Heikman, S., Zhang, N.Q., Shen, L., Calleja, E., Munoz, E., Speck, J., Mishra, U.K.
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Volume:
23
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2002.1004217
Date:
June, 2002
File:
PDF, 211 KB
english, 2002
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