Fabrication of GaN-based nanoscale device structures...

Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition

Motayed, Abhishek, Davydov, Albert V., Vaudin, Mark D., Levin, Igor, Melngailis, John, Mohammad, S. N.
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Volume:
100
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2215354
File:
PDF, 750 KB
english, 2006
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