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The influence of defects and postdeposition treatments on the free carrier density in lightly phosphorus-doped large-grained polycrystalline silicon films
Straub, Axel, Inns, Daniel, Terry, Mason L., Gebs, Raphael, Aberle, Armin G.Volume:
98
Year:
2005
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1977197
File:
PDF, 403 KB
english, 2005