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The effect of order and dose of H and He sequential implantation on defect formation and evolution in silicon
Nguyen, Phuong, Bourdelle, K. K., Maurice, T., Sousbie, N., Boussagol, A., Hebras, X., Portigliatti, L., Letertre, F., Tauzin, A., Rochat, N.Volume:
101
Year:
2007
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2432380
File:
PDF, 854 KB
english, 2007