Low interface state density SiO2 deposited at 300 °C by...

Journal of Applied Physics 1988 Vol. 63; Iss. 9

Low interface state density SiO2 deposited at 300 °C by remote plasma-enhanced chemical vapor deposition on reconstructed Si surfaces

Fountain, G. G., Rudder, R. A., Hattangady, S. V., Markunas, R. J., Lindorme, P. S.
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Volume:
63
Year:
1988
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.340133
File:
PDF, 576 KB
english, 1988
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