InP/InAlGaAs light-emitting transistors and transistor...

Journal of Applied Physics 2011 Vol. 109; Iss. 6

InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer

Huang, Yong, Ryou, Jae-Hyun, Dupuis, Russell D., Dixon, Forest, Feng, Milton, Holonyak, Nick
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Volume:
109
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3561368
File:
PDF, 2.89 MB
english, 2011
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