[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - A simple and high-performance 130 nm SOI eDRAM technology using floating-body pass-gate transistor in trench-capacitor cell for system-on-a-chip (SoC) applications
Kumar, M., Steigerwalt, M.D., Walsh, B.L., Doney, T.L., Wildrick, D., Bard, K.A., Dobuzinsky, D.M., McFarland, P.A., Schiller, C.E., Messenger, B., Rathmill, S.E., Gasasira, A.R., Parries, P.C., Iyer,Year:
2003
Language:
english
DOI:
10.1109/iedm.2003.1269312
File:
PDF, 296 KB
english, 2003