[IEEE 2008 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2008.04.21-2008.04.23)] 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - In-Situ Surface Passivation and Metal-Gate/High-¿ Dielectric Stack Formation for N-channel Gallium Arsenide Metal-Oxide-Semiconductor Field-Effect Transistors

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