Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2010 Vol. 28; Iss. 1
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Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies
Herrmann, Tom, Flachowsky, Stefan, Illgen, Ralf, Klix, Wilfried, Stenzel, Roland, Höntschel, Jan, Feudel, Thomas, Horstmann, ManfredVolume:
28
Year:
2010
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3292643
File:
PDF, 522 KB
english, 2010