Fermi-level pinning at polycrystalline silicon-HfO[sub 2]...

Applied Physics Letters 2007 Vol. 90; Iss. 7

Fermi-level pinning at polycrystalline silicon-HfO[sub 2] interface as a source of drain and gate current 1∕f noise

Magnone, P., Crupi, F., Pantisano, L., Pace, C.
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Volume:
90
Year:
2007
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2472716
File:
PDF, 393 KB
english, 2007
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