Plasma-enhanced chemical vapor deposition of in situ doped epitaxial silicon at low temperatures. I. Arsenic doping
Comfort, James H., Reif, RafaelVolume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343040
File:
PDF, 2.11 MB
english, 1989