Electroplating copper in sub-100 nm gaps by additives with...

Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability

Lin, Kun-Cheng, Shieh, Jia-Min, Chang, Shih-Chieh, Dai, Bau-Tong, Chen, Chia-Fu, Feng, Ming-Shiann
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Volume:
20
Year:
2002
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.1477422
File:
PDF, 517 KB
english, 2002
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