Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping
Hirahara, Toru, Komorida, Taku, Gu, Yan, Nakamura, Fumitaka, Idzuchi, Hiroshi, Morikawa, Harumo, Hasegawa, ShujiVolume:
80
Language:
english
Journal:
Physical Review B
DOI:
10.1103/physrevb.80.235419
Date:
December, 2009
File:
PDF, 801 KB
english, 2009