[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Strain relaxation of Ga/sub 0.2/In/sub 0.8/As and InAs/sub 0.5/P/sub 0.5/ layers grown on InP substrate for 1.6 to 2.4 μm spectral range Ga/sub x/In/sub 1-x/As/InAs/sub y/P/sub 1-y//InP photodiodes application

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