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[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - The optimal profile design for SJ-MOSFET fabricated by double-ion-implantation and multi-epitaxial method
Ono, Syotaro, Saito, Wataru, Izumisawa, Masaru, Sumi, Yasuto, Kurushima, Shoichiro, Tsuji, Masataka, Tokano, Ken'ichi, Yamaguchi, MasakazuYear:
2008
Language:
english
DOI:
10.1109/ispsd.2008.4538923
File:
PDF, 230 KB
english, 2008