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Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
Kasami, Akinobu, Naito, Makoto, Toyama, Masaharu, Maeda, KeijiVolume:
8
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.8.1469
Date:
December, 1969
File:
PDF, 1.75 MB
1969