Device Design and Scalability of a Double-Gate Tunneling...

Japanese Journal of Applied Physics 2008 / 4 Vol. 47; Iss. 4

Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

Toh, Eng-Huat, Wang, Grace Huiqi, Chan, Lap, Sylvester, Dennis, Heng, Chun-Huat, Samudra, Ganesh S., Yeo, Yee-Chia
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.2593
Date:
April, 2008
File:
PDF, 252 KB
english, 2008
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