Low-temperature electrical characterization of fully depleted eXtra-strained SOI n-MOSFETs with TiN/HfO2 gate stack for the 32-nm technology node
S. Feruglio, F. Andrieu, O. Faynot, G. GhibaudoVolume:
49
Year:
2009
Language:
english
Pages:
6
DOI:
10.1016/j.cryogenics.2008.12.004
File:
PDF, 733 KB
english, 2009