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[IEEE 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, China (2008.12.8-2008.12.10)] 2008 IEEE International Conference on Electron Devices and Solid-State Circuits - A charge-based compact model for arbitrary doped cylindrical surrounding-gate MOSFETs
Feilong Liu,, Jian Zhang,, Frank He,, Feng Liu,, Lining Zhang,, Mansun Chan,Year:
2008
Language:
english
DOI:
10.1109/edssc.2008.4760654
File:
PDF, 468 KB
english, 2008