[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs
Lin, D., Alian, A., Gupta, S., Yang, B., Bury, E., Sioncke, S., Degraeve, R., Toledano, M. L., Krom, R., Favia, P., Bender, H., Caymax, M., Saraswat, K. C., Collaert, N., Thean, A.Year:
2012
Language:
english
DOI:
10.1109/iedm.2012.6479121
File:
PDF, 1.08 MB
english, 2012