A poly-Si TFT integrated gate-data line-crossover structure...

IEEE Electron Device Letters 2001 / 08 Vol. 22; Iss. 8

A poly-Si TFT integrated gate-data line-crossover structure employing an air-gap for large-size AMLCD panel

Jin-Woo Park,, Min-Cheol Lee,, Woo-Jin Nam,, In-Hyuk Song,, Min-Koo Han,
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Volume:
22
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.936357
Date:
August, 2001
File:
PDF, 61 KB
english, 2001
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