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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme
Wu, C.C., Lin, D.W., Keshavarzi, A., Huang, C.H., Chan, C.T., Tseng, C.H., Chen, C.L., Hsieh, C.Y., Wong, K.Y., Cheng, M.L., Li, T.H., Lin, Y.C., Yang, L.Y., Lin, C.P., Hou, C.S., Lin, H.C., Yang, J.LYear:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703430
File:
PDF, 428 KB
english, 2010