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[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - 3.3 V BiNMOS technology using NPN transistors without buried layers
Shida, A., Kagamihara, M., Komatsu, M., Kumagai, K., Hirata, M.Year:
1991
Language:
english
DOI:
10.1109/iedm.1991.235416
File:
PDF, 302 KB
english, 1991