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[IEEE 4th International Conference on Solid-State and IC Technology - Beijing, China (24-28 Oct. 1995)] Proceedings of 4th International Conference on Solid-State and IC Technology - Evaluation of charging effects during X-ray photoelectron spectroscopy measurements of ultra-thin SiO/sub 2//Si interfaces
Alay, J.L., Fukuda, M., Nakagawa, K., Yokoyama, S., Hirose, M.Year:
1995
Language:
english
DOI:
10.1109/icsict.1995.503548
File:
PDF, 236 KB
english, 1995