[IEEE 2009 IEEE International Electron Devices Meeting...

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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

Hubert, A., Nowak, E., Tachi, K., Maffini-Alvaro, V., Vizioz, C., Arvet, C., Colonna, J.-P., Hartmann, J.-M., Loup, V., Baud, L., Pauliac, S., Delaye, V., Carabasse, C., Molas, G., Ghibaudo, G., De Sa
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Year:
2009
Language:
english
DOI:
10.1109/iedm.2009.5424260
File:
PDF, 1.77 MB
english, 2009
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