[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Subband structure and effective mass of strained SiGe (110) inversion layer for PMOSFET
Wei-Chin Wang,, Shu-Tong Chang,, Bing-Fong Hsieh,Year:
2010
Language:
english
DOI:
10.1109/inec.2010.5424761
File:
PDF, 105 KB
english, 2010