Redox Reaction Switching Mechanism in RRAM Device With...

IEEE Electron Device Letters 2011 / 04 Vol. 32; Iss. 4

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Syu, Yong-En, Chang, Ting-Chang, Tsai, Tsung-Ming, Hung, Ya-Chi, Chang, Kuan-Chang, Tsai, Ming-Jinn, Kao, Ming-Jer, Sze, Simon M.
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2011.2104936
Date:
April, 2011
File:
PDF, 404 KB
english, 2011
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